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| PD - 95300 IRF7379PBF HEXFET(R) Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated Lead-Free S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 2 3 4 7 D1 D1 D2 D2 N-Ch VDSS 30V P-Ch -30V 6 5 P-CHANNEL MOSFET RDS(on) 0.045 0.090 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings Parameter VSD ID @ TA = 25C ID @ TA = 70C I DM PD @TA = 25C VGS dv/dt TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. N-Channel 30 5.8 4.6 46 2.5 0.02 20 5.0 -55 to + 150 -5.0 P-Channel -30 -4.3 -3.4 -34 Units A W W/C V V/ns C Thermal Resistance Ratings Parameter RJA Maximum Junction-to-Ambient Max. 50 Units C/W www.irf.com 1 10/7/04 IRF7379PBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage Min. Typ. Max. N-Ch 30 -- -- P-Ch -30 -- -- N-Ch -- 0.032 -- P-Ch -- -0.037 -- -- 0.038 0.045 N-Ch -- 0.055 0.075 -- 0.070 0.090 P-Ch -- 0.130 0.180 N-Ch 1.0 -- -- P-Ch -1.0 -- -- N-Ch 5.2 -- -- P-Ch 2.5 -- -- N-Ch -- -- 1.0 P-Ch -- -- -1.0 N-Ch -- -- 25 P-Ch -- -- -25 N-P -- -- 100 N-Ch -- -- 25 P-Ch -- -- 25 N-Ch -- -- 2.9 P-Ch -- -- 2.9 N-Ch -- -- 7.9 P-Ch -- -- 9.0 N-Ch -- 6.8 -- P-Ch -- 11 -- N-Ch -- 21 -- P-Ch -- 17 -- N-Ch -- 22 -- P-Ch -- 25 -- N-Ch -- 7.7 -- P-Ch -- 18 -- N-P -- 4.0 -- N-P -- 6.0 -- N-Ch -- 520 -- P-Ch -- 440 -- N-Ch -- 180 -- P-Ch -- 200 -- N-Ch -- 72 -- P-Ch -- 93 -- Units V V/C V S A Conditions VGS = 0V, ID = 250A VGS = 0V, I D = -250A Reference to 25C, ID = 1mA Reference to 25C, I D = -1mA VGS = 10V, ID = 5.8A VGS = 4.5V, ID = 4.9A VGS = -10V, ID =- 4.3A VGS = -4.5V, ID =- 3.7A VDS = VGS, ID = 250A VDS = VGS, I D = -250A VDS = 15V, ID = 2.4A VDS = -24V, ID = -1.8A VDS = 24 V, VGS = 0V VDS = -24V, VGS = 0V VDS = 24 V, VGS = 0V, TJ = 125C VDS = -24V, VGS = 0V, TJ = 125C VGS = 20V N-Channel ID = 2.4A, VDS = 24V, VGS = 10V P-Channel ID = -1.8A, VDS = -24V, VGS = -10V N-Channel VDD = 15V, I D = 2.4A, RG = 6.0, RD = 6.2 P-Channel VDD = -15V, ID = -1.8A, RG = 6.0, RD = 8.2 Between lead, 6mm (0.25in.) from package and center of die contact N-Channel VGS = 0V, V DS = 25V, = 1.0MHz P-Channel VGS = 0V, V DS = -25V, = 1.0MHz V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(ON) VGS(th) gfs I DSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductace Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance nC ns nH pF Source-Drain Ratings and Characteristics Parameter IS I SM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. Typ. Max. Units Conditions -- -- 3.1 -- -- -3.1 A -- -- 46 -- -- -34 -- -- 1.0 TJ = 25C, IS = 1.8A, VGS = 0V V -- -- -1.0 TJ = 25C, IS = -1.8A, VGS = 0V -- 47 71 N-Channel ns -- 53 80 TJ = 25C, IF = 2.4A, di/dt = 100A/s -- 56 84 P-Channel nC TJ = 25C, IF = -1.8A, di/dt = -100A/s -- 66 99 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 10 ) Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. N-Channel ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS, TJ 150C P-Channel ISD -1.8A, di/dt 90A/s, VDD V(BR)DSS, TJ 150C 2 www.irf.com N-Channel 1000 IRF7379PBF VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 1000 I , Drain-to-Source Current (A) D 100 I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 4.5V 10 4.5V 10 1 0.1 1 20s PULSE WIDTH TJ = 25C 10 A 100 VDS , Drain-to-Source Voltage (V) 1 0.1 20s PULSE WIDTH TJ = 150C 1 10 100 A VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 10 4 5 6 7 VDS = 15V 20s PULSE WIDTH 8 9 10 A 0.1 0.0 0.5 1.0 1.5 VGS = 0V 2.0 A 2.5 VGS , Gate-to-Source Voltage (V) VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7379PBF 2.0 N-Channel 0.20 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 4.0A R DS (on), Drain-to-Source On Resistance ( ) 0.16 1.5 0.12 1.0 VGS = 4.5V 0.08 0.5 VGS = 10V 0.04 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A 0.00 2 4 6 8 10 TJ , Junction Temperature (C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance ( ) 0.08 0.07 0.06 0.05 ID = 5.8A 0.04 0.03 0 4 8 12 16 VGS , Gate-to-Source Voltage (V) Fig 7. Typical On-Resistance Vs. Gate Voltage 4 www.irf.com N-Channel 1000 20 IRF7379PBF I D = 2.4A VDS = 24V 800 Ciss 600 C oss 400 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 16 C, Capacitance (pF) 12 8 200 Crss 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 11 15 20 25 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 8. Typical Capacitance Vs. Drain-to-Source Voltage Fig 9. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7379PBF 100 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP P-Channel 100 -ID , Drain-to-Source Current (A) 10 -4.5V -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP 10 -4.5V 1 0.1 1 20s PULSE WIDTH TJ = 25C A 10 100 1 0.1 20s PULSE WIDTH TJ = 150C 1 10 100 A -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 11. Typical Output Characteristics Fig 12. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C -ISD , Reverse Drain Current (A) 10 TJ = 150C TJ = 25C 1 10 1 4 5 6 7 VDS = -15V 20s PULSE WIDTH 8 9 10 A 0.1 0.0 0.3 0.6 0.9 VGS = 0V 1.2 A 1.5 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 13. Typical Transfer Characteristics Fig 14. Typical Source-Drain Diode Forward Voltage 6 www.irf.com P-Channel R DS (on), Drain-to-Source On Resistance ( ) 0.50 IRF7379PBF R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D = -3.0A 0.40 1.5 0.30 1.0 VGS = -4.5V 0.20 0.5 0.10 VGS = -10V 0.0 -60 -40 -20 0 20 40 60 80 VGS = -10V 100 120 140 160 A 0.00 0 2 4 6 8 10 12 14 TJ , Junction Temperature (C) -ID , Drain Current (A) Fig 15. Normalized On-Resistance Vs. Temperature Fig 16. Typical On-Resistance Vs. Drain Current R DS (on), Drain-to-Source On Resistance ( ) 0.16 0.14 0.12 0.10 ID = -4.3A 0.08 0.06 0 4 8 12 16 -VGS , Gate-to-Source Voltage (V) Fig 17. Typical On-Resistance Vs. Gate Voltage www.irf.com 7 IRF7379PBF 1000 P-Channel 20 800 -VGS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd ID = -3.0A VDS = -24V 16 C, Capacitance (pF) 600 Ciss Coss 12 400 8 200 Crss 4 0 1 10 100 A 0 0 5 10 FOR TEST CIRCUIT SEE FIGURE 22 15 20 25 A - -V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7379PBF SO-8 Package Outline Dimensions are shown in milimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BASIC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A C 0.10 [.004] y K x 45 8X b 0.25 [.010] A1 CAB 8X L 7 8X c NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O A S UBS T RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking Information (Lead-Free) EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF T HE YEAR WW = WEEK A = AS SEMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 www.irf.com 9 IRF7379PBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 10 www.irf.com |
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